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M426R4GA3PB0-CWM Samsung 32GB PC5-44800 DDR5-5600MHz Memory Module


M426R4GA3PB0-CWM Overview

The high-performance 32GB DDR5-5600MHz (PC5-44800) ECC Unbuffered SODIMM manufactured by Samsung. Operating at an energy-efficient standard voltage of 1.1V, this 262-pin mobile module features a Dual-Rank ($2\text{R}\times8$) physical layout utilizing premium Samsung DRAM silicon components. Optimized with a standard CAS latency of 40 (CL40), it is engineered to bring specialized hardware-level error checking to high-end laptops, mobile workstations, mini PCs, and small-form-factor network attached storage (NAS) devices that support unbuffered ECC memory. Built upon the advanced DDR5 architectural baseline, the module shifts voltage regulation away from the motherboard and directly onto the memory PCB via an integrated Power Management Integrated Circuit (PMIC), ensuring highly stable local power distribution under sustained processing spikes.

$1,290

M426R4GA3PB0-CWM Technical Specifications

Samsung 32GB PC5-44800 DDR5-5600MHz ECC Unbuffered CL40 262-Pin SoDIMM 1.1V Dual Rank Memory Module

Brand : Samsung
Capacity : 32GB
Memory Type : DDR5 SDRAM
Speed : 5600MHz (PC5-44800)
Error Correction : On-Die ECC / ECC Unbuffered (ECC SODIMM)
Latency : CL40
Module Type : Unbuffered SODIMM (Laptop / Small Form Factor)
Rank Configuration : 2Rx8 (Dual Rank)
Pin Count : 262-Pin
Voltage : 1.1V

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