Samsung Memory - RAM
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Samsung Memory - RAM
K4U6E3S4AA-MGCL Samsung LPDDR4X-4266MHz x32 (16GB) DRAM Memory Chip
K4U6E3S4AA-MGCL Overview
Samsung LPDDR4X-4266MHz x32 (16GB) DRAM Memory Chip. This is a high-performance 16GB DRAM memory chip from Samsung, utilizing LPDDR4X technology. It operates at a fast 4266MHz clock speed and features a x32 data width, making it ideal for mobile devices, laptops, and other applications requiring efficient, low-power, and high-speed memory solutions. This chip delivers excellent performance for multitasking and data-intensive tasks while maintaining low power consumption, contributing to extended battery life in portable devices.
SKU: K4U6E3S4AA-MGCL -
Samsung Memory - RAM
K4F6E3S4HM-MGCJ Samsung LPDDR4-3733MHz 512Mx32 (16GB) DRAM Memory Chip
K4F6E3S4HM-MGCJ Overview
Samsung LPDDR4-3733MHz 512Mx32 (16GB) DRAM Memory Chip. This is a LPDDR4 DRAM memory manufactured by Samsung made for an operating temperature of -25 to 85°C TC. It has a memory-capacity of 16Gb and is organized as 512Mx32 coming in a RoHS-compliant BGA 200 ball package. The data-rate is specified with 3733 MT/s reflecting a max clock-speed of 1866 MHz and a minimum clock cycle time of 0.536ns.
SKU: K4F6E3S4HM-MGCJ -
Samsung Memory - RAM
K4AAG085WA-BCWE Samsung DDR4-3200MHz 2Gx8 (16GB) DRAM Memory Chip
K4AAG085WA-BCWE Overview
Samsung DDR4-3200MHz 2Gx8 (16GB) DRAM Memory Chip. This is a DDR4 DRAM memory manufactured by Samsung made for an operating temperature of 0 to 95°C TC. It has a memory-capacity of 16Gb and is organized as 2Gx8 coming in a RoHS-compliant BGA 78 ball package. The data-rate is specified with 3200 MT/s reflecting a max clock-speed of 1600 MHz and a minimum clock cycle time of 0.625ns.
SKU: K4AAG085WA-BCWE -
Samsung Memory - RAM
K4AAG165WA-BCWE Samsung DDR4-3200MHz 1Gx16 (16GB) DRAM Memory Chip
K4AAG165WA-BCWE Overview
Samsung DDR4-3200MHz 1Gx16 (16GB) DRAM Memory Chip. is a DDR4 DRAM memory manufactured by Samsung made for an operating temperature of 0 to 95°C TC. It has a memory-capacity of 16Gb and is organized as 1Gx16 coming in a RoHS-compliant BGA 96 ball package. The data-rate is specified with 3200 MT/s reflecting a max clock-speed of 1600 MHz and a minimum clock cycle time of 0.625ns. This chip is suitable for use in a variety of computing systems, including servers, desktops, and high-end workstations, providing reliable and efficient memory performance.
SKU: K4AAG165WA-BCWE -
Samsung Memory - RAM
M474A4G43AB1-CVF Samsung 32GB PC4-23400 DDR4-2933MHz Memory Module
M474A4G43AB1-CVF Overview
Samsung 32GB PC4-23400 DDR4-2933MHz ECC Unbuffered CL21 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A4G43AB1-CVF is a 32GB DDR4-2933MHz ECC Unbuffered memory module designed for high-performance computing. Featuring a PC4-23400 specification, this dual-rank SoDimm operates at 1.2V and has a CAS latency of 21. With 260 pins, it ensures reliable and efficient data processing, making it ideal for use in servers and workstations that require enhanced error correction and unbuffered memory capabilities.
SKU: M474A4G43AB1-CVF -
Samsung Memory - RAM
M425R2GA3BB0-CQKOL Samsung 16GB PC5-38400 Laptop Memory
M425R2GA3BB0-CQKOL Overview
Samsung 16GB PC5-38400 DDR5-4800MHz non-ECC Unbuffered CL40 262-Pin SoDIMM 1.1V Single Rank Laptop Memory. The Samsung is a 16GB DDR5-4800MHz non-ECC unbuffered laptop memory module. It features a 262-pin SoDIMM form factor, operating at a low voltage of 1.1V. With a CAS latency of CL40, this single-rank memory module enhances laptop performance with high-speed data transfer rates and improved efficiency, making it ideal for demanding computing tasks.
SKU: M425R2GA3BB0-CQKOL -
Samsung Memory - RAM
M393A4K40BB3-CVF Samsung 32GB PC4-23400 DDR4-2933MHz ECC Memory Module
M393A4K40BB3-CVF Overview
Samsung 32GB PC4-23400 DDR4-2933MHz ECC Registered CL21 288-Pin RDIMM 1.2V Dual Rank Memory Module. The Samsung M393A4K40BB3-CVF is a high-performance 32GB DDR4 memory module designed for advanced computing needs. Operating at a speed of 2933MHz with a PC4-23400 rating, this ECC Registered memory ensures data integrity and reliability. Featuring a CL21 latency, it is built with 288 pins and runs at a low voltage of 1.2V. The dual-rank RDIMM module is ideal for servers and workstations requiring robust memory performance and stability.
SKU: M393A4K40BB3-CVF -
Samsung Memory - RAM
M323R2GA3BB0-CQKOL Samsung 16GB PC5-38400 DDR5-4800MHz non-ECC Desktop Memory
M323R2GA3BB0-CQKOL Technical Specifications
Samsung 16GB PC5-38400 DDR5-4800MHz non-ECC Unbuffered CL40 288-Pin UDIMM 1.1V Single Rank Desktop Memory. The Samsung is a 16GB PC5-38400 DDR5-4800MHz desktop memory module. It features a non-ECC, unbuffered design with a CL40 latency, making it suitable for high-performance computing. This single rank UDIMM operates at 1.1V and fits into a 288-pin slot, offering reliable and efficient memory performance for modern desktops.
SKU: M323R2GA3BB0-CQKOL -
Samsung Memory - RAM
M321R4GA0BB0-CQKVG Samsung 32GB PC5-38400 DDR5-4800MHz Memory Module
M321R4GA0BB0-CQKVG Overview
Samsung 32GB PC5-38400 DDR5-4800MHz ECC Registered CL40 288-Pin DIMM 1.1V Dual Rank Memory Module. The Samsung M321R4GA0BB0-CQKVG is a high-performance 32GB DDR5 memory module designed for demanding computing environments. Operating at 4800MHz with a CL40 latency, this ECC Registered DIMM ensures data integrity and reliability. Featuring a PC5-38400 interface, 288-pin configuration, and dual-rank architecture, it runs at 1.1V, making it an ideal choice for servers and workstations requiring robust and efficient memory solutions.
SKU: M321R4GA0BB0-CQKVG -
Samsung Memory - RAM
M321R4GA0BB0-CQKMG Samsung 32GB PC5-38400 DDR5-4800MHz Memory Module
M321R4GA0BB0-CQKMG Overview
Samsung 32GB PC5-38400 DDR5-4800MHz Registered ECC CL40 288-Pin DIMM 1.1V Dual Rank Memory Module. The Samsung M321R4GA0BB0-CQKMG is a 32GB DDR5 memory module designed for high-performance computing. Operating at 4800MHz with a PC5-38400 speed, it features Registered ECC for enhanced reliability and error correction. This dual-rank, 288-pin DIMM module has a CAS latency of CL40 and runs at 1.1V, making it an excellent choice for demanding applications requiring robust and efficient memory performance.
SKU: M321R4GA0BB0-CQKMG -
Samsung Memory - RAM
M321R4GA0BB0-CQKEG Samsung 32GB PC5-38400 DDR5-4800MHz Memory Module
M321R4GA0BB0-CQKEG Overview
Samsung 32GB PC5-38400 DDR5-4800MHz Registered ECC CL40 288-Pin DIMM 1.1V Dual Rank Memory Module. This Samsung is a high-performance 32GB DDR5 memory module designed for advanced computing systems. Operating at 4800MHz with a PC5-38400 speed, it ensures fast and efficient data processing. This Registered ECC (Error-Correcting Code) memory module offers enhanced reliability and data integrity, making it ideal for critical applications. This memory module has a 288-pin DIMM form factor, which is the standard for DDR5 memory modules, ensuring compatibility with a wide range of motherboards. It operates at a voltage of 1.2V, which is within the standard range for DDR5 memory modules.
SKU: M321R4GA0BB0-CQKEG -
Samsung Memory - RAM
M471A1G43DB0-CPB Samsung 8GB PC4-17000 DDR4-2133MHz Memory Module
M471A1G43DB0-CPB Overview
Samsung 8GB PC4-17000 DDR4-2133MHz non-ECC Unbuffered CL15 260-Pin So Dimm 1.2V Dual Rank Memory Module. The Samsung is an 8GB DDR4-2133MHz memory module designed to enhance your system’s performance. With non-ECC unbuffered CL15 technology, it offers reliable and fast operation. Featuring a 260-pin So Dimm form factor and dual rank configuration, it’s compatible with a wide range of systems. Operating at a low voltage of 1.2V, it’s energy-efficient and reliable.
SKU: M471A1G43DB0-CPB -
Samsung Memory - RAM
M393A2K43CB2-CTD7Y Samsung 16GB PC4-21300 DDR4-2666MHz Memory Module
M393A2K43CB2-CTD7Y Overview
Samsung 16GB PC4-21300 DDR4-2666MHz Registered ECC CL19 288-Pin DIMM 1.2V Dual Rank Memory Module. The Samsung M393A2K43CB2-CTD7Y is a high-performance memory module designed for reliable and efficient computing. With a capacity of 16GB and DDR4-2666MHz speed, it offers enhanced multitasking and data processing capabilities. This registered ECC memory module ensures data integrity and system stability, making it suitable for demanding server environments. It features a 288-pin DIMM form factor and operates at a low voltage of 1.2V. This dual-rank memory module is an excellent choice for upgrading server memory or building new server systems.
SKU: M393A2K43CB2-CTD7Y -
Samsung Memory - RAM
M474A1G43DB0-CPB Samsung 8GB PC4-17000 DDR4-2133MHz Memory Module
M474A1G43DB0-CPB Overview
Samsung 8GB PC4-17000 DDR4-2133MHz ECC Unbuffered CL15 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A1G43DB0-CPB is an 8GB DDR4-2133MHz ECC unbuffered memory module designed for high-performance computing systems. With a 260-pin SoDIMM form factor, it offers compatibility with a range of devices. Featuring a CL15 latency and operating at 1.2V, this dual-rank memory module provides reliable and efficient performance. Ideal for upgrading system memory in laptops, workstations, or small form factor PCs, it ensures smooth multitasking and enhanced overall system responsiveness.
SKU: M474A1G43DB0-CPB -
Samsung Memory - RAM
M392B4G70DE0-YH9 Samsung 32GB PC3-10600 DDR3-1333MHz ECC Memory Module
M392B4G70DE0-YH9 Overview
Samsung 32GB PC3-10600 DDR3-1333MHz ECC Registered CL9 240-Pin DIMM 1.35V Low Voltage Very Low Profile (VLP) Quad Rank Memory Module. The Samsung M392B4G70DE0-YH9 is a high-performance memory module designed for demanding server applications. With a capacity of 32GB and DDR3-1333MHz speed, it ensures smooth and efficient multitasking. Featuring ECC Registered CL9 technology, it offers enhanced reliability and error correction capabilities. Its 240-pin DIMM form factor and low voltage profile make it compatible with various server configurations, while the quad-rank design optimizes memory performance. Ideal for data centers or enterprise servers requiring stable and efficient memory solutions.
SKU: M392B4G70DE0-YH9 -
Samsung Memory - RAM
M474A1G43EB1-CRC Samsung 8GB PC4-19200 DDR4-2400MHz Memory Module
M474A1G43EB1-CRC Overview
Samsung 8GB PC4-19200 DDR4-2400MHz ECC Unbuffered CL17 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A1G43EB1-CRC is an 8GB DDR4-2400MHz ECC Unbuffered SoDimm memory module, designed for high-performance computing systems. With a CL17 latency and dual rank configuration, it ensures efficient data processing. This module operates at a low voltage of 1.2V, contributing to energy efficiency. Featuring a 260-pin form factor, it’s compatible with a wide range of systems requiring reliable memory solutions for seamless multitasking and intensive workloads.
SKU: M474A1G43EB1-CRC -
Samsung Memory - RAM
M471A2K43CB1-CRC Samsung 16GB PC4-19200 DDR4-2400MHz Memory Module
M471A2K43CB1-CRC Overview
Samsung 16GB PC4-19200 DDR4-2400MHz non-ECC Unbuffered CL17 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M471A2K43CB1-CRC is a high-performance 16GB DDR4 memory module designed to enhance your computing experience. Operating at a speed of 2400MHz, it offers smooth and responsive multitasking for your PC. With non-ECC unbuffered CL17 technology, this module ensures reliable data transmission and stability. Its 260-pin SoDimm form factor makes it compatible with a wide range of laptops and small form factor PCs. Additionally, operating at a low voltage of 1.2V, it helps conserve energy while delivering powerful performance.
SKU: M471A2K43CB1-CRC -
Samsung Memory - RAM
M471A4G43MB1-CTD Samsung 32GB PC4-21300 Memory Module
M471A4G43MB1-CTD Overview
Samsung 32GB PC4-21300 DDR4-2666MHz non-ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M471A4G43MB1-CTD is a high-performance memory module designed to enhance your computing experience. With a capacity of 32GB and DDR4-2666MHz speed, it ensures smooth multitasking and faster data processing. This non-ECC unbuffered memory module is compatible with a wide range of systems and features a 260-pin SoDimm form factor for easy installation. Operating at a low voltage of 1.2V, it offers energy efficiency without compromising on performance. Ideal for upgrading laptops or compact PCs, this dual-rank memory module delivers reliable and responsive performance for your computing needs.
SKU: M471A4G43MB1-CTD -
Samsung Memory - RAM
M471A2K43DB1-CTD Samsung 16GB PC4-21300 DDR4-2666MHz Memory Module
M471A2K43DB1-CTD Overview
Samsung 16GB PC4-21300 DDR4-2666MHz non-ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M471A2K43DB1-CTD is a high-performance memory module designed to boost your system’s capabilities. With a capacity of 16GB and DDR4-2666MHz speed, it ensures smooth multitasking and efficient operation. This non-ECC unbuffered module, with a CL19 latency, is ideal for enhancing your laptop’s performance. Its 260-pin SoDIMM form factor and 1.2V power consumption make it compatible with a wide range of systems while providing energy efficiency. Whether for gaming, creative work, or everyday computing tasks, this dual-rank memory module offers reliability and speed for your computing needs.
SKU: M471A2K43DB1-CTD -
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