MZ-VAP8T0B Technical Specifications
Samsung 9100 Pro 8tb M.2 2280 Pcie 5.0 Nvme 2.0 Internal Solid State Drive
Manufacturer : SAMSUNG
Manufacturer Part : MZ-VAP8T0B
Product Line : 9100 Pro
Specifications
Interface: Pcie 5.0 X4, Nvme 2.0
Nand Flash: SAMSUNG V Nand Tlc
Cache Memory: SAMSUNG 8gb Low Power Ddr4x Sdram
Endurance (tbw): 4800 Tb
Mean Time Between Failures (mtbf): 171.1 Year
Performance:
Sequential Read: Up To 14,800 Mb/s
Sequential Write: Up To 13,400 Mb/s
Random Read: Up To 2,200,000 Iops
Random Write: Up To 2,600,000 Iops
Power Consumption:
Average Read: 10.5w
Average Write: 8.8w
Idle : Typical 9.3 Mw
Device Sleep: Typical 8.6 Mw
Dimensions :
(w X H X D) : 3.2 X 0.9 X 0.2 (in.)





